Large redshift in photoluminescence of InAs/AlAs short-period superlattices due to highly ordered lateral composition modulation-Reference-Cited by-同舟云学术

Large redshift in photoluminescence of InAs/AlAs short-period superlattices due to highly ordered lateral composition modulation

Published:2023-06-06 Issue:4 Volume:41 Page:
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:

Author:

Yao Jinshan¹²^ORCID,Li Jiayi¹,Zhang Qihang¹²,Zuo Zongyan³,Zhang Weiwei¹,Wang Wenyang⁴^ORCID,Li Chen¹^ORCID,Chen Baile⁴^ORCID,Deng Yu¹²⁵^ORCID,Zhang Xuejin¹²⁵,Lu Hong¹²⁵^ORCID,Chen Yan-Feng¹^ORCID

Affiliation:

1. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University 1 , Nanjing 210093, China

2. Collaborative Innovation Center of Advanced Microstructures, Nanjing University 2 , Nanjing 210093, China

3. School of Electronic Science and Engineering, Nanjing University 3 , Nanjing 210093, China

4. School of Information Science and Technology, ShanghaiTech University 4 , Shanghai 201210, China

5. 5 Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China

Abstract

Highly ordered lateral composition modulation (LCM) is obtained in InAs/AlAs short-period superlattices (SPS) grown by molecular beam epitaxy and its effect on photoluminescence (PL) is studied. The formation of LCM and modulation length can be resolved by x-ray diffraction. Furthermore, atomic-resolution scanning transmission electron microscopy results reveal both the composition and strain distribution in the modulated and unmodulated samples and demonstrate a clear transition of strain redistribution due to LCM formation, showing that LCM is a preferential route over dislocation formation for strain relief in these strain-compensated SPSs. The LCM leads to a large redshift in PL emissions up to 0.3 eV, which we attribute to the In-rich regions in the modulated InAs/AlAs SPS. This finding facilitates a deeper understanding of these modulated SPSs.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://pubs.aip.org/avs/jva/article-pdf/doi/10.1116/6.0002748/17969667/042705_1_6.0002748.pdf

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