2.1 μm InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers

Author:

Xie Shengwen,Yang Chengao,Huang ShuShan,Yuan Ye,Zhang Yi,Shang Jinming,Cai Chenyuan,Zhang Yu,Xu Yingqiang,Ni Haiqiao,Niu Zhichuan

Funder

National Natural Science Foundation of China

Chinese Academy of Science

Key R&D Program of Guangdong Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

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1. Low-threshold 2 µm InAs/InP quantum dash lasers enabled by punctuated growth;Optics Express;2024-01-02

2. Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm;Materials Science in Semiconductor Processing;2023-01

3. Thermal characterization of high-power GaSb-based laser;Semiconductor Lasers and Applications XII;2022-12-27

4. High power laser diode emitted at 2μm;Thirteenth International Conference on Information Optics and Photonics (CIOP 2022);2022-12-15

5. Research on beam quality control technology of 2 μm antimonide semiconductor laser;Frontiers in Physics;2022-11-10

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