Metalorganic–vapor‐phase‐epitaxial growth of Mg‐doped Ga1−xAlxAs layers and their properties
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337032
Reference10 articles.
1. Diffusion of Impurities in Semiconducting Substitutional Solid Solutions InAs1−ηPη and GaAs1−nPη
2. The growth of Magnesium-doped GaAs by the Om-Vpe process
3. Low-threshold single quantum well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant
4. Doping and electrical properties of Mg in LPE AlxGa1−xAs
5. Photoluminescence measurements in Ge‐dopedp‐type Ga0.60Al0.40As
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