Diffusion of Impurities in Semiconducting Substitutional Solid Solutions InAs1−ηPη and GaAs1−nPη-Reference-Cited by-同舟云学术

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Diffusion of Impurities in Semiconducting Substitutional Solid Solutions InAs1−ηPη and GaAs1−nPη

Published:1969 Issue:2 Volume:35 Page:1053-1064
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Arseni K. A.,Boltaks B. I.,Dzhafarov T. D.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Diffuziya v poluprovodnikakh (Diffusion in Semiconductors), Fizmatgiz. Moscow 1961.

2. Physics of III–V Compounds, Wiley, Inc., 1964.

3. Semiconductor Statistics, Pergamon Press, 1962.

4. , and , Coll. of papers: Fiz. p-n perekhodov i poluprovodnikovykh priborov (Physics of p-n junctions and semiconductor devices), Nauka, Leningrad 1969 (p. 188).

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mg-doping transients during metalorgic vapor phase epitaxy of GaAs and AlGaInP;Journal of Crystal Growth;1994-08

2. Zn Diffusion in In1-xGaxP;Japanese Journal of Applied Physics;1990-04-20

3. GaAs tunnel junction grown by metalorganic vapor‐phase epitaxy for multigap cascade solar cells;Journal of Applied Physics;1987-09

4. Metalorganic chemical vapour deposition of junction isolated GaAlAs/GaAs LED structures;Journal of Crystal Growth;1986-09

5. Metalorganic–vapor‐phase‐epitaxial growth of Mg‐doped Ga1−xAlxAs layers and their properties;Journal of Applied Physics;1986-02-15

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