Photoluminescence Studies of Mg-Doped AlxGa1-xAs Epitaxial Layers Grown by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Photoluminescence Studies of Mg-Doped AlxGa1-xAs Epitaxial Layers Grown by Molecular Beam Epitaxy

Published:2009-04-20 Issue:4 Volume:48 Page:041103
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Min Su,Kim Do Yeob,Park Ho Jin,Kim Jong Su,Kim Jin Soo,Lee Dong-Yul,Son Jeong-Sik,Leem Jae-Young

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference26 articles.

1. Photoluminescence investigation of Si as p-type dopant in AlGaAs grown by molecular beam epitaxy on high-index planes

2. Metalorganic–vapor‐phase‐epitaxial growth of Mg‐doped Ga1−xAlxAs layers and their properties

3. Be doping of (311)A and (100) Al0.24Ga0.76As grown by molecular beam epitaxy

4. Photoluminescence of AlxGa1−xAs alloys

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1. Effects of calcination temperature on the piezoelectric properties of lead-free Ag doped (Na,K)NbO3–LiTaO3 piezoelectric ceramics;Journal of Alloys and Compounds;2013-04

2. Growth and optical characteristics of Mg-doped GaAs epitaxial layers by molecular beam epitaxy;Microelectronic Engineering;2012-01

3. Photoluminescence Studies of ZnO Nanorods Grown by Vapor Phase Transport;Korean Journal of Metals and Materials;2011-10-05

4. Photoluminescence Studies of Porous ZnO Nanorods;Japanese Journal of Applied Physics;2011-03-22

5. Photoluminescence Studies of Porous ZnO Nanorods;Japanese Journal of Applied Physics;2011-03-01

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