Growth and band alignment of epitaxial Ni metal gate on crystalline LaAlO3 (001) dielectric film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3153507
Reference20 articles.
1. High dielectric constant gate oxides for metal oxide Si transistors
2. Physical and electrical properties of metal gate electrodes on HfO[sub 2] gate dielectrics
3. Interface dipole and effective work function of Re in Re∕HfO2∕SiOx∕n-Si gate stack
4. Chemical tuning of band alignments for metal gate/high-κoxide interfaces
5. Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
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2. Energy band alignment of high-k oxide heterostructures at MoS2/Al2O3 and MoS2/ZrO2 interfaces;Journal of Applied Physics;2016-09-28
3. Effect of interfacial coupling on photocatalytic performance of large scale MoS2/TiO2 hetero-thin films;Applied Physics Letters;2015-02-23
4. The energy-band alignment at molybdenum disulphide and high-k dielectrics interfaces;Applied Physics Letters;2014-06-09
5. Mass-spectrometric and kinetic study of Ni films MOCVD from bis-(ethylcyclopentadienyl) nickel;Surface and Coatings Technology;2013-09
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