Chemical tuning of band alignments for metal gate/high-κoxide interfaces
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.73.045302/fulltext
Reference34 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Epitaxial Y-stabilized ZrO2 films on silicon: Dynamic growth process and interface structure
3. Bonding, Energies, and Band Offsets ofSi−ZrO2andHfO2Gate Oxide Interfaces
4. The interface between silicon and a high-k oxide
5. First-principles study ofZrO2∕Siinterfaces: Energetics and band offsets
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