Interface dipole and effective work function of Re in Re∕HfO2∕SiOx∕n-Si gate stack-Reference-Cited by-同舟云学术

Interface dipole and effective work function of Re in Re∕HfO2∕SiOx∕n-Si gate stack

Published:2006-02-13 Issue:7 Volume:88 Page:072907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liang Y.,Curless J.,Tracy C. J.,Gilmer D. C.,Schaeffer J. K.,Triyoso D. H.,Tobin P. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2175488

Reference20 articles.

1. Hafnium and zirconium silicates for advanced gate dielectrics

2. Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

3. Effects of high-/spl kappa/ gate dielectric materials on metal and silicon gate workfunctions

4. C. Hobbs, L. Fonseca, V. Dhandapani, S. Samavedam, B. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hedge, D. Gilmer, R. Garcia, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H. Tseng, B. White, and P. Tobin, 2003 Symposium on VLSI Tech. Digest, 2003.

5. Contributions to the effective work function of platinum on hafnium dioxide

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MoRe Electrodes with 10 nm Nanogaps for Electrical Contact to Atomically Precise Graphene Nanoribbons;ACS Applied Nano Materials;2023-07-21

2. Effective Work Functions of the Elements;Progress in Surface Science;2021-12

3. The thickness measurement of ultrathin films from new high-kmaterial HfO2by grazing incidence x-ray reflectivity;Materials Research Express;2016-06-16

4. Electron Energy Barriers Between Conducting Materials and Insulating Oxides;Internal Photoemission Spectroscopy;2014

5. Scaling and Limitation of Si-Based CMOS;High-k Gate Dielectrics for CMOS Technology;2012-08-23