Improved resistive switching performance and realized electric control of exchange bias in a NiO/HfO<sub>2</sub> bilayer structure-Reference-Cited by-同舟云学术

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Improved resistive switching performance and realized electric control of exchange bias in a NiO/HfO₂ bilayer structure

Published:2023 Issue:36 Volume:25 Page:24436-24447
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Lu Yu¹^ORCID,Yuan Yuan¹,Liu Ruobai¹,Liu Tianyu¹,Chen Jiarui¹,Wei Lujun²,Wu Di¹,Zhang Wei¹,You Biao¹,Du Jun¹³

Affiliation:

1. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China

2. School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, P. R. China

3. Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, P. R. China

Abstract

The schematic description of ‘Set’ and ‘Reset’ processes and electric control of exchange bias by using a NiO/HfO2 resistive layer.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP03106C

Reference72 articles.

1. Memristor-The missing circuit element

2. Memristive devices for computing

3. Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing

4. Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer

5. Low Power MoS 2 /Nb 2 O 5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

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1. Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au–Co₃O₄ Thin-Film Memristors;ACS Omega;2024-07-23

2. Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States;ACS Applied Electronic Materials;2023-11-14

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