Low Power MoS 2 /Nb 2 O 5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity-Reference-Cited by-同舟云学术

Low Power MoS 2 /Nb 2 O 5 Memtransistor Device with Highly Reliable Heterosynaptic Plasticity

Published:2021-06-23 Issue:40 Volume:31 Page:2104174
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Nam Jae Hyeon¹,Oh Seyoung¹²,Jang Hye Yeon¹,Kwon Ojun¹²,Park Heejeong¹²,Park Woojin¹²,Kwon Jung‐Dae³,Kim Yonghun³,Cho Byungjin¹²^ORCID

Affiliation:

1. Department of Advanced Material Engineering Chungbuk National University Chungdae‐ro 1, Seowon‐Gu Cheongju Chungbuk 28644 Republic of Korea

2. Department of Urban, Energy, and Environmental Engineering Chungbuk National University Chungdae‐ro 1, Seowon‐Gu Cheongju Chungbuk 28644 Republic of Korea

3. Department of Energy and Electronic Materials Surface Materials Division Korea Institute of Materials Science (KIMS) 797 Changwondaero, Sungsan‐gu Changwon Gyeongnam 51508 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202104174

Reference62 articles.

1. Review of memristor devices in neuromorphic computing: materials sciences and device challenges

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