InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99547
Reference11 articles.
1. Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition
2. Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular‐beam epitaxy
3. Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes
4. Dynamic behaviour of a GaAs-AlGaAs MQW laser diode
5. Temperature dependence of threshold current for coupled multiple quantum-well In1−xGax P1−zAsz-InP heterostructure laser diodes
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Periodic stratified structure in a multilayer planar optical waveguide;Journal of the Optical Society of America A;1992-04-01
2. InP based optoelectronics;Journal of Crystal Growth;1991-01
3. High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes;Japanese Journal of Applied Physics;1989-04-20
4. 1.3μm GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD);Electronics Letters;1989
5. Metalorganic chemical vapor deposition of InGaAsP/InP layers and fabrication of 1.3‐μm planar buried heterostructure lasers;Journal of Applied Physics;1988-10
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