InP based optoelectronics

Author:

Pütz Norbert

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference98 articles.

1. GaInAsP Alloy Semiconductors,1982

2. Compositional dependence of band‐gap energy and conduction‐band effective mass of In1−x−yGaxAlyAs lattice matched to InP

3. Proc. 14th Conf. on Solid State Devices;Yasuda,1983

4. Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design

5. Proc. 14th Intern. Symp. on GaAs and Related Compounds;Erman,1988

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1. III-V and Related Semiconductor Materials;The Group 13 Metals Aluminium, Gallium, Indium and Thallium: Chemical Patterns and Peculiarities;2011-03-30

2. Wet-etch bulk micromachining of (100) InP substrates;Journal of Micromechanics and Microengineering;2004-06-18

3. Electrical isolation of n-type and p-type InP layers by proton bombardment;Journal of Applied Physics;2001-05-15

4. Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stability;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04

5. Ruthenium: A superior compensator of InP;Applied Physics Letters;1998-12-28

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