Excitonic transitions in InGaP/InAlGaP strained quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110772
Reference21 articles.
1. Effects of strained‐layer structures on the threshold current density of AlGaInP/GaInP visible lasers
2. High performance 634 nm InGaP/InGaAlP strained quantum well lasers
3. Low threshold, 633 nm, single tensile‐strained quantum well Ga0.6In0.4P/(AlxGa1−x)0.5In0.5P laser
4. OMVPE growth of AlGaInP/GaxIn1−xP strained quantum well structures and their applications to visible laser diodes
5. Atomspheric pressure organometallic vapor‐phase epitaxial growth and characterization of Ga0.4In0.6P/(Al0.4Ga0.6)0.5In0.5P strained quantum wells
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1. A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy;physica status solidi (a);2014-08-06
2. Spectroscopic derivative in optical study of GaInAs/InP and GaInP/AlGaInP multip le quantum wells;Acta Physica Sinica;2003
3. Conduction band offset in the AlxGayIn1−x−yP/Ga0.52In0.48P system as studied by luminescence spectroscopy;Journal of Applied Physics;2003-01
4. Ordering parameter and band-offset determination for orderedGaxIn1−xP/(Al0.66Ga0.34)yIn1−yPquantum wells;Physical Review B;2002-07-10
5. Effective mass and exciton binding energy in ordered (Al)GaInP quantum wells evaluated by derivative of reflectivity;Journal of Applied Physics;2002-02-15
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