A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy

Published:2014-08-06 Issue:11 Volume:211 Page:2601-2610
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Baumann Vasilij¹,Rödel Reinhold¹,Heidemann Matthias¹,Schneider Christian¹,Kamp Martin¹,Höfling Sven¹

Affiliation:

1. Technische Physik, Physikalisches Institut; Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg; Am Hubland 97074 Würzburg Germany

Funder

State of Bavaria

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431348/fullpdf

Reference33 articles.

1. Red to green photoluminescence of InP-quantum dots in InP

2. POF — Polymer Optical Fibers for Data Communication

3. Optical and structural properties of InP quantum dots embedded in(AlxGa1−x)0.51In0.49P

4. Red luminescence from strain‐induced GaInP quantum dots

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