Low threshold, 633 nm, single tensile‐strained quantum well Ga0.6In0.4P/(AlxGa1−x)0.5In0.5P laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107153
Reference15 articles.
1. Short-wavelength InGaAlP visible laser diodes
2. AlGaInP visible laser diodes grown on misoriented substrates
3. Short‐wavelength (∼625 nm) room‐temperature continuous laser operation of In0.5(AlxGa1−x)0.5P quantum well heterostructures
4. Short‐wavelength (≲6400 Å) room‐temperature continuous operation ofp‐nIn0.5(AlxGa1−x)0.5P quantum well lasers
5. Low (2.0 kA/cm2) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15° off (100) GaAs substrates
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1. Strain-induced modifications of the band structure of In/sub x/Ga/sub 1-x/P-In/sub 0.5/Al/sub 0.5/P multiple quantum wells;IEEE Journal of Quantum Electronics;1998
2. Effect of indirect Γ-L and Γ-X transfer on the carrier dynamics of InGaP/InAlP multiple quantum wells;Applied Physics Letters;1997-01-06
3. Optical gain of InGaP and cubic GaN quantum‐well lasers with very strong spin–orbit coupling;Journal of Applied Physics;1996-05-15
4. Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasers;IEEE Journal of Quantum Electronics;1996
5. Theory of optical gain in strained‐layer quantum wells within the 6×6 Luttinger–Kohn model;Journal of Applied Physics;1995-08-15
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