Atomspheric pressure organometallic vapor‐phase epitaxial growth and characterization of Ga0.4In0.6P/(Al0.4Ga0.6)0.5In0.5P strained quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346364
Reference35 articles.
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4. Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers
5. Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P and its heterostructures
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1. Conduction band offset in the AlxGayIn1−x−yP/Ga0.52In0.48P system as studied by luminescence spectroscopy;Journal of Applied Physics;2003-01
2. Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs;Applied Physics Letters;1998-08-24
3. Dual-polarization, single quantum-well AlGaInP laser diode structure;IEEE Journal of Quantum Electronics;1994
4. Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes;IEEE Journal of Quantum Electronics;1994
5. Direct determination of the band discontinuities inInxGa1−xP/InyAl1−yP multiple quantum wells;Physical Review B;1993-12-15
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