A two-dimensional model for the subthreshold swing of short-channel double-gate metal–oxide–semiconductor field effect transistors with a vertical Gaussian-like doping profile-Reference-Cited by-同舟云学术

A two-dimensional model for the subthreshold swing of short-channel double-gate metal–oxide–semiconductor field effect transistors with a vertical Gaussian-like doping profile

Published:2011-03 Issue:5 Volume:109 Page:054508
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dubey Sarvesh,Tiwari Pramod Kumar,Jit S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3552309

Reference28 articles.

1. Device scaling limits of Si MOSFETs and their application dependencies

2. Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate

3. Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

4. Multiple-gate SOI MOSFETs

5. Subthreshold current model of FinFETs based on analytical solution of 3-D Poisson's equation

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