Threshold voltage modeling of Gaussian-doped Dual work function Material Cylindrical Gate-all-around (CGAA) MOSFET considering the effect of temperature and fixed interface trapped charges
Author:
Funder
Department of Science and Technology, Ministry of Science and Technology, India
Publisher
Elsevier BV
Subject
General Engineering
Reference28 articles.
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4. Impact of work-function variation on analog figures-of-merits for high-k/metal-gate junctionless FinFET and gate-all-around nanowire MOSFET;Wei-Feng;Microelectron. J.,2019
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