Using thermally stimulated currents to visualize defect clusters in neutron‐irradiated silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352253
Reference17 articles.
1. Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rate
2. Thermally Stimulated Current Analysis of Neutron Irradiated Silicon
3. TSC defect level in silicon produced by irradiation with muons of GeV-energy
4. Disordered Regions in Semiconductors Bombarded by Fast Neutrons
5. Potential of Fast Neutron Damage Regions in Heavily Doped Semiconductors
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