Potential of Fast Neutron Damage Regions in Heavily Doped Semiconductors-Reference-Cited by-同舟云学术

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Potential of Fast Neutron Damage Regions in Heavily Doped Semiconductors

Published:1989-08-01 Issue:2 Volume:154 Page:507-512
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Litvinov V. L.,Ukhin N. A.,Churakov Yu. I.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Fast-Neutron Radiation Damages in Heavily Doped p-Silicon

2. and , The Physics of Semiconductors, Izd. Nauka, Moscow 1982.

3. and , Methods of Mathematical Physics, Izd. Mir, Moscow 1970.

4. Handbook of Mathematical Functions with Formulas, Graphs and Mathematical Tables, Ed. and , Izd. Nauka, Moscow 1979.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Particle interaction and displacement damage in silicon devices operated in radiation environments;Reports on Progress in Physics;2007-03-08

2. Radiation damage in silicon detectors;La Rivista Del Nuovo Cimento Series 3;1994-11

3. Defect complexes in neutron irradiated silicon detectors: evaluation and effects;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1993-03

4. Using thermally stimulated currents to visualize defect clusters in neutron‐irradiated silicon;Journal of Applied Physics;1992-11

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