Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons-Reference-Cited by-同舟云学术

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

Published:2004-03-30 Issue:1 Volume:7 Page:8-15
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Dolgolenko A.P.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. 1. RD48 Status Report (R&D On Silicon for future Experiments), CERN / LHCC-39, June 1997.

2. 2. B.G. Svensson and J.L. Lindström, Generation of divacancies in silicon by Mev electrons:Dose rate dependence and influence of Sn and P // J. Appl. Phys., 72(12), pp. 5616-5621(1992).

3. 3. I.I. Kolkovskii, L.F. Lugakov, V.V. Shusha, Recombination properties of irradiation defects in Si (NTD) // Fiz. Techn. Polupr., 20(5), pp. 964-967 (1986) (in Russian).

4. 4. B.A. Akimov, N.B. Brandt, L.I. Ryabova, D.R. Khokhlov, Promising Alternative to the Modern High - Performance Infrared Photodetectors // Proceedings of International Conference ìPhysics of electronic materialsî, Kaluga, Russia,October 1-4, 2002, p.15.

5. 5. M.†McPherson, T.†Sloan and B.K.†Jones, Suppression of irradiation effects in gold-doped silicon detectors // J. Phys.D: Appl.Phys., 30, pp. 3028-3035 (1997).

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