Generation of divacancies in silicon by MeV electrons: Dose rate dependence and influence of Sn and P
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351961
Reference28 articles.
1. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
2. Photoconductivity Studies of Defects in Silicon: Divacancy-Associated Energy Levels
3. Photoconductivity Studies of Radiation-Induced Defects in Silicon
4. 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy
5. Effect of Polarized Light on the 1.8-, 3.3-, and 3.9-μ Radiation-Induced Absorption Bands in Silicon
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