Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen-Reference-Cited by-同舟云学术

Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen

Published:2006-07 Issue:8 Volume:243 Page:1842-1852
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Dolgolenko A. P.,Litovchenko P. G.,Varentsov M. D.,Gaidar G. P.,Litovchenko A. P.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Macroscopic results for a novel oxygenated silicon material

2. , , , , , , , , and , in: Proc. 2nd RD50-Workshop on Radiation Hard Semiconductor Devices for Very High Luminosity Colliders, Geneva, Sweden, 2003. Online available at: http://www.cern.ch/rd50.

3. Variation of Carrier Removal Rate with Irradiation Dose in Fast-Pile Neutron Irradiated n-Si

4. Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

5. Characteristics of Neutron Damage in Silicon

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