Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD-Reference-Cited by-同舟云学术

Understanding inherent substrate selectivity during atomic layer deposition: Effect of surface preparation, hydroxyl density, and metal oxide composition on nucleation mechanisms during tungsten ALD

Published:2017-02-07 Issue:5 Volume:146 Page:052811
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:The Journal of Chemical Physics

Author:

Lemaire Paul C.¹,King Mariah¹,Parsons Gregory N.¹^ORCID

Affiliation:

1. Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

Funder

Semiconductor Research Corporation (SRC)

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4967811

Reference44 articles.

1. Atomic Layer Deposition: An Overview

2. Low-Temperature Atomic Layer Deposition of Tungsten using Tungsten Hexafluoride and Highly-diluted Silane in Argon

3. Inherent substrate-dependent growth initiation and selective-area atomic layer deposition of TiO2 using “water-free” metal-halide/metal alkoxide reactants

4. Effects of B[sub 2]H[sub 6] Pretreatment on ALD of W Film Using a Sequential Supply of WF[sub 6] and SiH[sub 4]

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