Effects of B[sub 2]H[sub 6] Pretreatment on ALD of W Film Using a Sequential Supply of WF[sub 6] and SiH[sub 4]-Reference-Cited by-同舟云学术

Effects of B[sub 2]H[sub 6] Pretreatment on ALD of W Film Using a Sequential Supply of WF[sub 6] and SiH[sub 4]

Published:2005 Issue:10 Volume:8 Page:C155
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kim Soo-Hyun,Hwang Eui-Seong,Kim Baek-Mann,Lee Joo-Wan,Sun Ho-Jung,Hong Tae Eun,Kim Jun-Ki,Sohn Hyunchul,Kim Jinwoong,Yoon Tae-Sik

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference20 articles.

1. J.E.J. Schmitz , Chemical Vapor Deposition of Tungsten and Tungsten Silicides , Noyes Publications, Park Ridge, NJ (1991).

2. Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction

3. Nucleation and growth during tungsten atomic layer deposition on SiO2 surfaces

4. M. Yang, H. Chung, A. Yoon, H. Fang, A. Zhang, C. Knepfler, R. Jackson, J.S. Byun, A. Mak, M. Eizenberg, M. Xi, M. Kori, and A.K. Sinha , in Conference Proceedings ULSI, XVII , p. 655, Materials Research Society, Conshohocken, PA (2002).

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