Effect of hydrogen etching on 6H SiC surface morphology studied by reflection high-energy positron diffraction and atomic force microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125957
Reference11 articles.
1. Total Room Temperature Wet Cleaning for Si Substrate Surface
2. Etching Characteristics of Silicon Carbide in Hydrogen
3. Morphology, Atomic and Electronic Structure of 6H-SiC(0001) Surfaces
4. Si-H Bonds on the 6H-SiC(0001) Surface after $\bf H_{2}$ Annealing
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