Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(0001¯) surfaces-Reference-Cited by-同舟云学术

Scanning tunneling microscopic and spectroscopic studies on a crystalline silica monolayer epitaxially formed on hexagonal SiC(0001¯) surfaces

Published:2014-02-03 Issue:5 Volume:104 Page:051601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tochihara Hiroshi,Shirasawa Tetsuroh,Suzuki Takayuki,Miyamachi Toshio,Kajiwara Takashi,Yagyu Kazuma,Yoshizawa Shunsuke,Takahashi Toshio,Tanaka Satoru,Komori Fumio

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4863753

Reference17 articles.

1. Silicon Carbide

2. Growth of SiO2on SiC by dry thermal oxidation: mechanisms

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4. Structure ofSiO2∕4H−SiCinterface probed by positron annihilation spectroscopy

5. Structure of the interface between ultrathinSiO2films and4H−SiC(0001)

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