Structure of the interface between ultrathinSiO2films and4H−SiC(0001)-Reference-Cited by-同舟云学术

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Structure of the interface between ultrathinSiO2films and4H−SiC(0001)

Published:2006-07-12 Issue:3 Volume:74 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Schürmann Mark,Dreiner Stefan,Berges Ulf,Westphal Carsten

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.035309/fulltext

Reference30 articles.

1. Silicon carbide in contention

2. Ultrahigh-quality silicon carbide single crystals

3. Metal–oxide–semiconductor capacitors formed by oxidation of polycrystalline silicon on SiC

4. Intrinsic SiC/SiO2 Interface States

5. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface

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1. Experimental evidence of a mixed amorphous-crystalline graphene/SiC interface due to oxygen-intercalation;Surfaces and Interfaces;2022-06

2. Optimization of thermal oxidation for 4H-SiC and fabricate/characterize MOS capacitor;IOP Conference Series: Materials Science and Engineering;2021-03-01

3. Oxygen intercalated graphene on SiC(0001): Multiphase SiOx layer formation and its influence on graphene electronic properties;Carbon;2020-10

4. Investigation of Electrochemical Oxidation Behaviors and Mechanism of Single-Crystal Silicon (100) Wafer under Potentiostatic Mode;Coatings;2020-06-24

5. Engineering Metal-spxy Dirac Bands on the Oxidized SiC Surface;Nano Letters;2020-03-26

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