Si-H Bonds on the 6H-SiC(0001) Surface after $\bf H_{2}$ Annealing-Reference-Cited by-同舟云学术

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Si-H Bonds on the 6H-SiC(0001) Surface after $\bf H_{2}$ Annealing

Published:1997-06-01 Issue:Part 2, No. 6A Volume:36 Page:L699-L702
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tsuchida Hidekazu,Kamata Isaho,Izumi Kunikazu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-Principles Investigation of Near-Surface Divacancies in Silicon Carbide;Nano Letters;2023-12-05

2. Structure and electron affinity of the 4H–SiC (0001) surfaces: a methodological approach for polar systems;Journal of Physics: Condensed Matter;2021-04-20

3. Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors;Journal of Applied Physics;2021-02-21

4. Direct nitridation of 4H-SiC(0001) surface by H2/N2 treatment;Applied Physics Express;2020-09-01

5. Density functional theory study for adsorption of oxygen and water molecules on 6H-SiC(0001) surface;Chinese Journal of Chemical Physics;2019-08

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