Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors

Published:2021-02-21 Issue:7 Volume:129 Page:075702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jayawardhena I. U.¹^ORCID,Ramamurthy R. P.²^ORCID,Morisette D.²^ORCID,Ahyi A. C.¹^ORCID,Thorpe R.³,Kuroda M. A.¹^ORCID,Feldman L. C.³^ORCID,Dhar S.¹^ORCID

Affiliation:

1. Department of Physics, Auburn University, Auburn, Alabama 36849, USA

2. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA

3. Department of Physics and Astronomy and Department of Materials Science & Engineering, Rutgers University, Piscataway, New Jersey 08854, USA

Funder

Army Research Laboratory

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0040586

Reference41 articles.

1. Fundamentals of Silicon Carbide Technology

2. Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET

3. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

4. Effects of nitridation in gate oxides grown on 4H-SiC

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