Nucleation of copper on TiN and SiO2 from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1469687
Reference15 articles.
1. Chemical vapor deposition of copper from CuI hexafluoroacetylacetonate trimethylvinylsilane for ultralarge scale integration applications
2. A new metal-organic chemical vapor deposition process for selective copper metallization
3. Selective and blanket copper chemical vapor deposition for ultra-large-scale integration
4. Improved TiN film as a diffusion barrier between copper and silicon
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