Growth evolution and characterization of ultra-thin CoGe2 films synthesized via a catalytic solid–vapour reaction technique-Reference-Cited by-同舟云学术

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Growth evolution and characterization of ultra-thin CoGe2 films synthesized via a catalytic solid–vapour reaction technique

Published:2014 Issue:10 Volume:2 Page:1904
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Peter Antony Premkumar,Opsomer Karl,Adelmann Christoph,van Ammel Annemie,Meersschaut Johan,Moussa Alain,Schaekers Marc,Wen Liang Gong,Zsolt Tokei,Van Elshocht Sven

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C3TC32135E

Reference55 articles.

1. Silicides and germanides for nano-CMOS applications

2. Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

3. Growth behavior and microstructure of Co–Ge films prepared on GaAs substrate by high-temperature sequential deposition

4. Texture of NiGe on Ge(001) and its evolution with formation temperature

5. Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment for Germanium-Based Technology

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cobalt germanide contacts: growth reaction, phase formation models, and electrical properties;Journal of Materials Science: Materials in Electronics;2019-05-18

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