Growth behavior and microstructure of Co–Ge films prepared on GaAs substrate by high-temperature sequential deposition

Author:

Shi J,Ishii D,Hashimoto M,Barna A,Barna P.B,Haga Y,Nittono O

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Magnetic and structural properties of melt-spun Co-Ge alloys;Journal of Magnetism and Magnetic Materials;2020-03

2. Cobalt germanide contacts: growth reaction, phase formation models, and electrical properties;Journal of Materials Science: Materials in Electronics;2019-05-18

3. Experimental Investigation of the Co-Ge Phase Diagram;Journal of Phase Equilibria and Diffusion;2017-08-22

4. Growth evolution and characterization of ultra-thin CoGe2 films synthesized via a catalytic solid–vapour reaction technique;Journal of Materials Chemistry C;2014

5. Morphological evolution of epitaxial cobalt–semiconductor compound layers during growth in a scanning tunneling microscope;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

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