Annealing of irradiated epitaxial InP solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363380
Reference7 articles.
1. Minority‐carrier injection annealing of electron irradiation‐induced defects in InP solar cells
2. Degradation and annealing of electron‐irradiated diffused junction InP solar cells
3. A review of radiation effects in InP solar cells
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
5. Deep level transient spectroscopy of irradiatedp‐type InP grown by metalorganic chemical vapor deposition
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1. Mechanisms for Radiation Resistance of InP Photovoltaic Cells: A First Principle Study;Solar RRL;2023-01-12
2. Materials, Cell Structures, and Radiation Effects;Photovoltaic Solar Energy;2017-01-07
3. Effect of irradiation damage on the dark electric properties of single junction GaAs/Ge solar cells;Acta Physica Sinica;2014
4. Radiation response ofn-type base InP solar cells;Journal of Applied Physics;2001-10
5. Room temperature annealing of 5.48 MeV He induced defect in p+n and n+p grown by metal–organic chemical vapour deposition;Solid-State Electronics;2000-04
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