Degradation and annealing of electron‐irradiated diffused junction InP solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360386
Reference9 articles.
1. Radiation damage in InP single crystals and solar cells
2. Mechanism for radiation resistance of InP solar cells
3. Optimizing the radiation resistance of InP solar cells: Effect of dopant density and cell thickness
4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
5. High conversion efficiency and high radiation resistance InP homojunction solar cells
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1. Mechanisms for Radiation Resistance of InP Photovoltaic Cells: A First Principle Study;Solar RRL;2023-01-12
2. Low energy proton irradiation effects on InP/InGaAs DHBTs and InP-base frequency dividers;Young Scientists Forum 2017;2018-03-05
3. Properties of Cu/Au Schottky contacts on InGaP layer;Journal of Applied Physics;2003-09-15
4. Room temperature annealing of 5.48 MeV He induced defect in p+n and n+p grown by metal–organic chemical vapour deposition;Solid-State Electronics;2000-04
5. Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1998-08-15
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