Minority‐carrier injection annealing of electron irradiation‐induced defects in InP solar cells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94756
Reference3 articles.
1. Injection‐Stimulated Vacancy Reordering in p‐Type Silicon at 76°K
2. Annealing of Electron-Irradiatedn-Type Silicon. I. Donor Concentration Dependence
3. Recombination‐enhanced annealing of theE1 andE2 defect levels in 1‐MeV‐electron–irradiatedn‐GaAs
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