Phosphorus cracking efficiency and flux transients from a valved effusion cell
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360261
Reference13 articles.
1. Design and operation of a valved solid-source As2 oven for molecular beam epitaxy
2. Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy
3. Optical Characterization of AlInP/GaAs Heterostructures
4. Operation of a molecular-beam epitaxy machine employing a valved solid phosphorus source
5. Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus
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2. Doping of ZnSe during molecular beam epitaxial growth using an atomic phosphorus source;Journal of Applied Physics;1999-01
3. Chemical beam epitaxial growth of GaAs[sub 1−x]P[sub x] on GaAs (100) substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
4. Solid source MBE growth and regrowth of 1.55 μm wavelength ridge lasers;Journal of Crystal Growth;1997-05
5. Low threshold 1.3 μm lasers grown by solid-source molecular beam epitaxy;Journal of Crystal Growth;1997-05
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