Optical Characterization of AlInP/GaAs Heterostructures

Abstract

AbstractA 45 period GaAs/A10.54In0.46P superlattice was grown by molecular beam epitaxy using valved solid-sources to supply both the arsenic (As4) and the phosphorus (P2) group V fluxes. The room temperature optical transmission spectrum shows evidence of ground state excitons. Higher energy confined states are exhibited in photovoltage and photoreflectance spectra. Doublets corresponding to the m≈1 through m≈7 folded longitudinal-acoustic phonon modes are observed in the Raman spectrum. Analysis of these phonon doublets enables the structure of the superlattice to be determined. The interface roughness was found to be approximately 2 monolayers, and the layer thicknesses were determined to be 82 Å GaAs and 48 Å A10.54In0.46P.