Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96199
Reference9 articles.
1. Epitaxial structures with alternate‐atomic‐layer composition modulation
2. Raman scattering determination of folded acoustical phonon dispersion curves in large period GaAs/GaAlAs superlattices
3. "Folded" optical phonons inGaAsGa1−xAlxAssuperlattices
4. PROBLEM RELATED TO THE MBE GROWTH AT HIGH SUBSTRATE TEM0PERATURE FORGaAs-Ga1-xAlxAs DOUBLE HETEROSTRUCTURE LASERS
5. Folded acoustic and quantized optic phonons in (GaAl)As superlattices
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