PROBLEM RELATED TO THE MBE GROWTH AT HIGH SUBSTRATE TEM0PERATURE FORGaAs-Ga1-xAlxAs DOUBLE HETEROSTRUCTURE LASERS-Reference-Cited by-同舟云学术

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PROBLEM RELATED TO THE MBE GROWTH AT HIGH SUBSTRATE TEM0PERATURE FORGaAs-Ga1-xAlxAs DOUBLE HETEROSTRUCTURE LASERS

Published:1982-12 Issue:C5 Volume:43 Page:C5-483-C5-489
ISSN:0449-1947
Container-title:Le Journal de Physique Colloques
language:
Short-container-title:J. Phys. Colloques

Author:

Alexandre F.,Duhamel N.,Ossart P.,Masson J. M.,Meillerat C.

Publisher

EDP Sciences

Subject

General Engineering

Link

http://jphyscol.journaldephysique.org/10.1051/jphyscol:1982559/pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulated molecular beam study of group III desorption during growth by MBE;Journal of Crystal Growth;1991-05

2. A new GaAs/Ga1−xAlxAs superlattice transistor grown by molecular beam epitaxy;Journal of Crystal Growth;1987-02

3. Molecular beam epitaxy;Reports on Progress in Physics;1985-12-01

4. Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxy;Applied Physics Letters;1985-08

5. Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1985-07

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