A new GaAs/Ga1−xAlxAs superlattice transistor grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
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1. Material-Related Growth Characteristics in MBE;Molecular Beam Epitaxy;1996
2. Sources of Atomic and Molecular Beams;Molecular Beam Epitaxy;1996
3. Material-Related Growth Characteristics in MBE;Molecular Beam Epitaxy;1989
4. Sources of Atomic and Molecular Beams;Molecular Beam Epitaxy;1989
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