Doping of ZnSe during molecular beam epitaxial growth using an atomic phosphorus source
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369477
Reference20 articles.
1. Synthesis and melt growth of doped ZnSe crystals
2. Phosphorus and Arsenic Impurity Centers in ZnSe. II. Optical and Electrical Properties
3. Phosphorus and Arsenic Impurity Centers in ZnSe. I. Paramagnetic Resonance
4. An optically-detected magnetic-resonance investigation of the 1.91 eV red emission in zinc selenide doped with phosphorus and gallium
5. Injection electroluminescence in phosphorous‐ion‐implanted ZnSe p‐n junction diodes
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