Extended x-ray absorption fine structure study of arsenic in HgCdTe: p-type doping linked to nonsubstitutional As incorporation in an unknown AsHg8 structure-Reference-Cited by-同舟云学术

Extended x-ray absorption fine structure study of arsenic in HgCdTe: p-type doping linked to nonsubstitutional As incorporation in an unknown AsHg8 structure

Published:2009-11-15 Issue:10 Volume:106 Page:103501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Biquard X.,Alliot I.,Ballet P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3255989

Reference33 articles.

1. TV/4 dual-band HgCdTe infrared focal plane arrays with a 25-εm pitch and spatial coherence

2. High-Operating-Temperature MWIR Detector Diodes

3. Latest Developments of HgCdTe e-APDs at CEA LETI-Minatec

4. The HgCdTe electron avalanche photodiode

5. p-type arsenic doping of Hg1−xCdxTe by molecular beam epitaxy

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