p-type arsenic doping of Hg1−xCdxTe by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120144
Reference11 articles.
1. HgCdTe double heterostructure injection laser grown by molecular beam epitaxy
2. High‐power diode‐laser‐pumped midwave infrared HgCdTe/CdZnTe quantum‐well lasers
3. MBE HgCdTe heterostructure p-on-n planar infrared photodiodes
4. p‐type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular‐beam epitaxy
5. Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutions
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