Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112674
Reference6 articles.
1. Design and operation of a valved solid-source As2 oven for molecular beam epitaxy
2. Molecular beam epitaxial growth of InGaAlP on (100) GaAs
3. Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy
4. (Ga0.22In0.78As)m⧸(Ga0.22In0.78P)m superlattices grown by atomic-layer molecular beam epitaxy on InP
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