Reverse annealing, clustering, and electron mobility in arsenic doped silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371922
Reference14 articles.
1. Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon
2. High‐Temperature Equilibrium Carrier Density of Arsenic‐Doped Silicon
3. High concentration diffusivity and clustering of arsenic and phosphorus in silicon
4. Effect of complex formation on diffusion of arsenic in silicon
5. Shallow junctions by high‐dose As implants in Si: experiments and modeling
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