Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials-Reference-Cited by-同舟云学术

Correlation between stress-induced leakage current and dielectric degradation in ultra-porous SiOCH low-k materials

Published:2015-10-28 Issue:16 Volume:118 Page:164101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Y.¹,Leśniewska A.¹,Varela Pedreira O.¹,de Marneffe J.-F.¹^ORCID,Ciofi I.¹,Verdonck P.¹,Baklanov M. R.¹^ORCID,Bömmels J.¹,De Wolf I.¹²^ORCID,Tőkei Zs.¹,Croes K.¹

Affiliation:

1. imec, Kapeldreef 75, 3001 Leuven, Belgium

2. Department of Materials Engineering, KU Leuven, 3000 Leuven, Belgium

Funder

imec

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4934520

Reference37 articles.

1. Dielectric Films for Advanced Microelectronics

2. Low dielectric constant materials for microelectronics

3. Plasma enhanced chemical vapor deposited SiCOH dielectrics: from low-kto extreme low-kinterconnect materials

4. Effect of Pore Structure of Nanometer Scale Porous Films on the Measured Elastic Modulus

5. Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art

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