Divacancy-iron complexes in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4788695
Reference18 articles.
1. Iron contamination in silicon technology
2. Characterization of diffusion length degradation in Czochralski silicon solar cells
3. Evaluation of possible mechanisms behind P gettering of iron
4. Iron‐vacancy‐oxygen complex in silicon
5. Special features of radiation-defect annealing in silicon p-n structures: The role of Fe impurity atoms
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical Activity of Iron and Copper in Si, SiGe and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
2. Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations;Journal of Applied Physics;2016-05-14
3. Density Functional Modeling of Defects and Impurities in Silicon Materials;Defects and Impurities in Silicon Materials;2015
4. Influence of n+ and p+ doping on the lattice sites of implanted Fe in Si;Journal of Applied Physics;2013-09-14
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