Density Functional Modeling of Defects and Impurities in Silicon Materials
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Publisher
Springer Japan
Link
http://link.springer.com/content/pdf/10.1007/978-4-431-55800-2_2
Reference156 articles.
1. Bukhori, M., Roy, S., Asenov, A.: Simulation of statistical aspects of charge trapping and related degradation in bulk mosfets in the presence of random discrete dopants. IEEE Trans. Electron Devices 57(4), 795–803 (2010). doi:10.1109/TED.2010.2041859
2. Safarian, J., Tranell, G., Tangstad, M.: Processes for upgrading metallurgical grade silicon to solar grade silicon. Energy Procedia 20, 88–97 (2012). doi:10.1016/j.egypro.2012.03.011
3. Hohenberg, P., Kohn, W.: Inhomogeneous electron gas. Phys. Rev. 136, B864–B871 (1964)
4. Kohn, W., Sham, L.J.: Self-consistent equations including exchange and correlation effects. Phys. Rev. 140, A1133–A1138 (1965)
5. Jones, R.O., Gunnarsson, O.: The density functional formalism, its applications and prospects. Rev. Mod. Phys. 61, 689–746 (1989). doi:10.1103/RevModPhys.61.689
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