Surface chemical-bonds analysis of silicon particles from diamond-wire cutting of crystalline silicon-Reference-Cited by-同舟云学术

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Surface chemical-bonds analysis of silicon particles from diamond-wire cutting of crystalline silicon

Published:2016-12-20 Issue:23 Volume:120 Page:235308
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Benayad Anass¹²,Hajjaji Hamza³⁴,Coustier Fabrice³⁴,Benmansour Malek³⁴,Chabli Amal³⁴^ORCID

Affiliation:

1. Univ. Grenoble Alpes, F-38000 Grenoble, France

2. CEA, LITEN, Department of Nanomaterials, MINATEC, 17 rue des martyrs, F-38054 Grenoble Cedex 09, France

3. Univ. Grenoble Alpes, INES, F-73375 Le Bourget du Lac, France

4. CEA, LITEN, Department of Solar Technologies, F-73375 Le Bourget du Lac, France

Funder

French national program

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference38 articles.

1. Characterization of Si/SiO2 interface defects by electron spin resonance

2. Studies on interface states at ultrathin SiO2/Si(100) interfaces by means of x-ray photoelectron spectroscopy under biases and their passivation by cyanide treatment

3. The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

4. Structure and Energetics of the Si-SiO2Interface

5. Microscopic structure of theSiO2/Si interface

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